A light-modified resistance switching (RS) memory device with BaTiO₃ / ZnO structure is fabricated by radio frequency magnetron sputtering technology. The device exhibits stable resistive switching behavior in the dark and under illumination, respectively. In the dark, the device’s high/low resistance ratio (RH / RL) is more than 10⁴ at 0.1 V read voltage, and the set/reset voltage (Vset < 0.4 V, Vreset > −0.2 V) is low. The RS of the device can be modulated by white light. When the device is irradiated by white light with intensity of 250 uw/cm², the high/low resistance ratio is modulated from 10⁴ to 10², and the set/reset voltage (Vset < 0.3 V, Vreset > −0.2 V) is still low.

中文翻译：

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BaTiO3/ZnO薄膜的光改性电阻转换

采用射频磁控溅射技术制备了具有BaTiO ₃ / ZnO结构的光改性电阻开关（RS）存储器件。该器件分别在黑暗和光照下表现出稳定的电阻开关行为。在黑暗中，设备的高/低电阻比（RH/R大号)在 0.1 V 读取电压时大于 10 ⁴，并且设置/复位电压（五放< 0.4 伏，五重置> -0.2 V) 低。该器件的 RS 可以通过白光调制。^{当器件受到强度为 250 uw/cm 2}的白光照射时，高/低电阻比从 10 ⁴调制到 10 ²，置位/复位电压（五放< 0.3 伏，五重置> -0.2 V) 仍然很低。