Vertically aligned Al-doped ZnO nanorods (AZO-NRs) were grown on glass substrate using a chemical bath deposition (CBD) method at various temperatures between 80°C and 130°C. The results showed the Al content in the AZO-NRs strongly depends on the growth temperature. The optimum doping level was attained at 110°C. The morphology was maintained in each sample, and the lasing properties were investigated against the Al-doped variation. The sample with a high doping level exhibited superior random lasing, with high intensity and spectral width of less than 0.08 nm. The same sample also had the lowest pumping threshold of 0.192 mW. More importantly, this study showed the possibility of utilizing doping as a tuning parameter for random lasing, whereby a 7.3 nm redshift in the lasing peak was observed with increasing doping concentration. This study also placed an emphasis on AZO-NRs as potential candidates for tunable random laser devices.

中文翻译：

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掺铝 ZnO 纳米棒中的紫外随机激光

使用化学浴沉积 (CBD) 方法在 80°C 和 130°C 之间的各种温度下，在玻璃基板上生长垂直排列的掺铝 ZnO 纳米棒（AZO-NRs）。结果表明 AZO-NRs 中的 Al 含量强烈依赖于生长温度。最佳掺杂水平是在 110°C 时达到的。在每个样品中都保持了形态，并针对铝掺杂的变化研究了激光特性。具有高掺杂水平的样品表现出优异的随机激光，具有高强度和小于 0.08 nm 的光谱宽度。相同的样品还具有 0.192 mW 的最低泵浦阈值。更重要的是，这项研究显示了利用掺杂作为随机激光的调谐参数的可能性，随着掺杂浓度的增加，在激光峰中观察到 7.3 nm 的红移。