Motivated by the possibility of a strain tuning effect on electronic properties of graphene, the semimetal−Mott insulator transition process on the uniaxial honeycomb lattice is numerically studied using the determinant quantum Monte Carlo method. As the simulations are based on the half-filled-repulsive Hubbard model, the system is sign-problem free. Herein, the temperature-dependent DC conductivity to characterize electronic transport properties is used. The data suggest that metal is suppressed in the presence of strain. More interestingly, within the finite-size-scaling study, a novel antiferromagnetic phase arises at around $U\sim U_{\mathrm{c}}$. Therefore, a phase diagram generated by the competition between interactions, and strain is established, which may help to expand the application of strain effect on graphene.

中文翻译：

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应变石墨烯中的金属-绝缘体转变：量子蒙特卡罗研究

受应变调谐对石墨烯电子特性的影响的可能性，使用行列式量子蒙特卡罗方法对单轴蜂窝晶格上的半金属-莫特绝缘体转变过程进行了数值研究。由于模拟基于半填充排斥哈伯德模型，因此系统无符号问题。在此，使用依赖于温度的 DC 电导率来表征电子传输特性。数据表明金属在应变存在时受到抑制。更有趣的是，在有限尺寸缩放研究中，新的反铁磁相出现在$你～{你}_{\mathrm{C}}$. 因此，建立了相互作用和应变之间竞争产生的相图，这可能有助于扩展应变效应在石墨烯上的应用。