Terahertz generation and detection is the key means to explore terahertz spectrum, one of which is the application of photoconductive antenna. In this study, a low-temperature gallium arsenide (LT-GaAs) epitaxial wafer antenna and an LT-GaAs thin-film antenna were fabricated. The LT-GaAs epitaxial wafer antenna was fabricated using an epitaxial wafer composed of LT-GaAs, AlAs,GaAs, and semi-insulating GaAs. An LT-GaAs thin film was obtained by etching the AlAs layer in the epitaxial wafer and then transferring it to a clean silicon wafer to fabricate the LT-GaAs thin-film antenna. The LT-GaAs epitaxial wafer and thin-film antennas were used as the generation and detection antennas, respectively. The two antennas were directly aligned at a distance of 2 mm from each other and placed into a self-made measurement system for detection. A THz spectrum of approximately 2.5 THz was obtained under 1550-nm laser excitation, thus verifying the antenna performance.

太赫兹的产生和检测是探索太赫兹频谱的关键手段，其中之一就是光电导天线的应用。在这项研究中，制造了低温砷化镓 (LT-GaAs) 外延晶片天线和 LT-GaAs 薄膜天线。LT-GaAs 外延晶片天线是使用由 LT-GaAs、AlAs、GaAs 和半绝缘 GaAs 组成的外延晶片制造的。通过蚀刻外延片中的AlAs层，然后将其转移到干净的硅片上以制造LT-GaAs薄膜天线，从而获得LT-GaAs薄膜。LT-GaAs 外延片和薄膜天线分别用作产生和检测天线。两根天线直接对齐，相距2mm，放入自制的测量系统中进行检测。