The interface properties of GaN metal–insulator–semiconductor (MIS) structures with a gate electrode metal deposited by electron beam (EB) or resistive heating evaporation were investigated. Also, the impact of the interface properties on the channel mobility in GaN MIS field-effect transistors was investigated. It was confirmed that interface charges including both interface states and positive fixed charges were introduced to an Al₂O₃/GaN interface by the formation of a gate electrode by EB evaporation. Consequently, the introduced interface charges degraded the electron mobility in the MIS channel.

中文翻译：

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栅电极形成工艺对 Al2O3/GaN 界面特性和沟道迁移率的影响

研究了具有通过电子束 (EB) 或电阻加热蒸发沉积的栅电极金属的 GaN 金属-绝缘体-半导体 (MIS) 结构的界面特性。此外，还研究了界面特性对 GaN MIS 场效应晶体管中沟道迁移率的影响。通过EB蒸发形成栅电极，确认了包括界面态和固定正电荷的界面电荷被引入到Al ₂ O ₃ /GaN界面。因此，引入的界面电荷降低了 MIS 通道中的电子迁移率。