Ce₂[Zr_1−x(Mg_1/3Sb_2/3)_x]₃(MoO₄)₉ (0.02 ⩽ x ⩽ 0.10) ceramics were prepared by the traditional solid-state method. A single phase, belonging to the space group of \(R⩈erline 3 c\), was detected by using X-ray diffraction at the sintering temperatures ranging from 700 to 850 °C. The microstructures of samples were examined by applying scanning electron microscopy (SEM). The crystal structure refinement of these samples was investigated in detail by performing the Rietveld refinement method. The intrinsic properties were calculated and explored via far-infrared reflectivity spectroscopy. The correlations between the chemical bond parameters and microwave dielectric properties were calculated and analyzed by Phillips-van Vechten-Levine (P-V-L) theory. Ce₂[Zr_0.94(Mg_1/3Sb_2/3)_0.06]₃(MoO₄)₉ ceramics with excellent dielectric properties were sintered at 725 °C for 6 h (ε_r = 10.37, Q×f = 71,748 GHz, and τ_f = −13.6 ppm/°C, ε_r is the dielectric constant, Q×f is the quality factor, and τ_f is the temperature coefficient of resonant frequency).

Ce ₂ [Zr _{1− x} (Mg _1/3 Sb _2/3 ) _x ] ₃ (MoO ₄ ) ₉ (0.02 ⩽ x ⩽ 0.10) 陶瓷是通过传统的固态方法制备的。单相，属于\(R⩈erline 3 c\)空间群, 是通过在 700 至 850 °C 的烧结温度下使用 X 射线衍射检测到的。通过应用扫描电子显微镜（SEM）检查样品的微观结构。通过执行 Rietveld 精修方法详细研究了这些样品的晶体结构精修。通过远红外反射光谱计算和探索固有特性。通过Phillips-van Vechten-Levine (PVL)理论计算和分析了化学键参数与微波介电特性之间的相关性。Ce ₂ [Zr _0.94 (Mg _1/3 Sb _2/3 ) _0.06 ] ₃ (MoO ₄ ) ₉具有优异介电性能的陶瓷在 725 °C 下烧结 6 h（ε _r = 10.37，Q × f = 71,748 GHz，τ _f = -13.6 ppm/°C，ε _r是介电常数，Q × f是品质因数，τ _f是谐振频率的温度系数）。