Electronic bands featuring nontrivial bulk topological invariant manifest through robust gapless modes at the boundaries, e.g., edges and surfaces. As such this bulk-boundary correspondence is also operative in driven quantum materials. For example, a suitable periodic drive can convert a trivial insulator into a Floquet topological insulator (FTI) that accommodates nondissipative dynamic gapless modes at the interfaces with vacuum. Here we theoretically demonstrate that dislocations, ubiquitous lattice defects in crystals, can probe FTIs as well as unconventional π-trivial insulator in the bulk of driven quantum systems by supporting normal and anomalous modes, localized near the defect core. Respectively, normal and anomalous dislocation modes reside at the Floquet zone center and boundaries. We exemplify these outcomes specifically for two-dimensional (2D) Floquet Chern insulator and p_x + ip_y superconductor, where the dislocation modes are respectively constituted by charged and neutral Majorana fermions. Our findings should be, therefore, instrumental in probing Floquet topological phases in the state-of-the-art experiments in driven quantum crystals, cold atomic setups, and photonic and phononic metamaterials through bulk topological lattice defects.

具有非平凡体拓扑不变性的电子带通过边界处的稳健无间隙模式表现出来，例如边缘和表面。因此，这种体边界对应也适用于驱动量子材料。例如，合适的周期性驱动可以将普通绝缘体转换为 Floquet 拓扑绝缘体 (FTI)，该绝缘体在与真空的界面处可容纳非耗散动态无间隙模式。在这里，我们从理论上证明了位错，晶体中普遍存在的晶格缺陷，可以探测 FTI 以及非常规的π- 通过支持位于缺陷核心附近的正常模式和异常模式，在大量驱动量子系统中的平凡绝缘体。正常和异常位错模式分别位于 Floquet 区中心和边界。我们专门为二维 (2D) Floquet Chern 绝缘体和p _x  +  i p _y超导体举例说明了这些结果，其中位错模式分别由带电和中性马约拉纳费米子构成。因此，我们的发现应该有助于在驱动量子晶体、冷原子设置以及通过体拓扑晶格缺陷的光子和声子超材料的最先进实验中探索 Floquet 拓扑相。