An n-ZnO/p-Si heterojunction was elaborated using the sol–gel spin-coating technique and simulated by two-dimensional (2D) numerical simulations. The structural, optical, electrical, and photoelectrical properties were investigated. X-ray diffraction (XRD) analysis confirmed the hexagonal würtzite structure of ZnO. Scanning electron microscopy (SEM) analysis revealed a homogeneous granular structure with mean grain size of 71.42 nm. High optical transmittance and low reflectance in the visible range were measured by ultraviolet–visible (UV–Vis) spectrophotometry. Photoluminescence (PL) measurements revealed the presence of V_O, V_Zn, Zn_i, and O_Zn intrinsic defects. Hall-effect measurements showed a charge carrier density of \(1.29\times {10}^{19}\,{\text{cm}}^{-3}\), mobility of \(1.41\times {10}^{-2}\,{\text{cm}}^{2}{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}\) and resistivity of \(34.25\,\Omega\,\mathrm{cm}\) in the ZnO layer. Under illumination, the n-ZnO/p-Si structure showed the following photoelectric parameters: J_SC = 4.62 × 10^–5 A/cm², V_oc = 0.385 V, and fill factor (FF) of 31.45%. Finally, simulations using Atlas Silvaco software revealed the existence of an interface states density of around 5 × 10¹⁴ cm^–2, which limits the photoelectric performance of the structure.

一个Ñ -ZnO / p -Si异质结是使用溶胶-凝胶旋涂技术详述和二维（2D）数值模拟仿真。研究了结构、光学、电学和光电特性。X 射线衍射 (XRD) 分析证实了 ZnO 的六方纤锌矿结构。扫描电子显微镜 (SEM) 分析显示平均颗粒尺寸为 71.42 nm 的均匀颗粒结构。通过紫外-可见（UV-Vis）分光光度法测量可见光范围内的高透光率和低反射率。光致发光（PL）测量表明存在V _ø，V_锌，Ž Ñ_我，和O_的Zn内在缺陷。霍尔效应测量表明载流子密度为\(1.29\times {10}^{19}\,{\text{cm}}^{-3}\)，迁移率为\(1.41\times {10}^ {-2}\,{\text{cm}}^{2}{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}\)和电阻率\(34.25\ ,\Omega\,\mathrm{cm}\)在 ZnO 层中。在光照下，n -ZnO/ p -Si 结构显示以下光电参数：J _SC = 4.62 × 10 ^–5 A/cm ²，V _oc = 0.385 V，填充因子 (FF) 为 31.45%。最后，使用 Atlas Silvaco 软件的模拟显示存在大约 5 × 10 ¹⁴的界面态密度cm ^–2，这限制了结构的光电性能。