This paper proposes a transimpedance amplifier (TIA) for a 100 Gb/s optical receiver. The proposed TIA adopts a g_m-boosted common-gate input stage with a diode-connected transistor, which lowers the input resistance resulting in a high input pole frequency. It was designed and fabricated in 32 nm CMOS SOI technology. Measurement results indicate that the TIA achieves a bandwidth of 74 GHz and a transimpedance gain of 26 dBΩ while dissipating 16.5 mW under 1.5 V supply voltage. The bandwidth of the proposed TIA is larger by 48% or more when compared with state-of-the art TIAs.

中文翻译：

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用于 100 Gb/s 光通信的输入电阻降低的g _m升压共栅跨阻放大器

本文提出了一种用于 100 Gb/s 光接收器的跨阻放大器 (TIA)。建议的 TIA 采用g _m升压共栅极输入级和二极管连接的晶体管，可降低输入电阻，从而产生高输入极点频率。它采用 32 nm CMOS SOI 技术设计和制造。测量结果表明，TIA 实现了 74 GHz 的带宽和 26 dBΩ 的跨阻增益，同时在 1.5 V 电源电压下的功耗为 16.5 mW。与最先进的 TIA 相比，提议的 TIA 的带宽要大 48% 或更多。