A new method is proposed for the measurement of the junction temperature of insulated gate bipolar transistors (IGBTs) during operation. The application of this method overcomes the problems arising from the complexity of measurement circuits or the difficulty of tests. The proposed measurement method uses the turn-on Miller plateau duration (t_mon), i.e., the duration from the first rising edge to the second rising edge of the gate–emitter voltage, of an IGBT. The obtained results show that t_mon is strongly linear with respect to temperature. For comparison, the temperature-sensitive electrical parameters (TSEPs) turn-off Miller plateau duration (i.e., the duration between the two falling edges of the V_ge-off curve) were also measured. The obtained results show that t_mon exhibits a high sensitivity that permits accurate determination of the junction temperatures of IGBTs.

提出了一种测量绝缘栅双极晶体管 (IGBT) 工作期间结温的新方法。该方法的应用克服了测量电路复杂或测试难度大的问题。建议的测量方法使用IGBT 的导通米勒平台持续时间 ( t _mon )，即从栅极-发射极电压的第一个上升沿到第二个上升沿的持续时间。获得的结果表明，t _mon与温度呈强线性关系。为了进行比较，对温度敏感的电气参数（TSEPs）关闭米勒平台持续时间（即，的两个下降沿之间的持续时间V _GE-断曲线）也进行了测量。获得的结果表明t _mon表现出高灵敏度，可以准确确定 IGBT 的结温。