Changing the direction of horizontal nanowires to extend them in the z direction and grow obliquely has important practical significance for achieving higher density integration and making it have more free space in multi-dimension. However, how to guide the horizontal nanowires to extend in the z direction and grow obliquely is still a challenge. In this paper, we report the regular and horizontal β-Ga₂O₃ nanostructure grown on c-plane Al₂O₃ substrates, and the evolution of β-Ga₂O₃ nanowires from horizontal growth to obliquely upward growth through the chemical vapor deposition (CVD) method. Field-emission scanning electron microscopy, field-emission transmission electron microscopy, X-ray diffraction, Raman spectrum and photoluminescence spectroscopy were used to investigate the morphology, structure, components, and optical properties of the as-synthesized β-Ga₂O₃ nanowires. Due to the change of the growth interface at the Au catalysts, there are four different growth modes for the growth of β-Ga₂O₃ nanowires. The preparation route reported in this study is more simple, general and low-cost compared to other common growth methods for Ga₂O₃ nanomaterials, and these studies about the evolution of nanowires growth can provide a reference for the change of growth direction of nanowires and simplify planar device processing technology.

改变水平纳米线的方向，使其沿z方向延伸并斜向生长，对于实现更高密度的集成，使其在多维上拥有更多的自由空间具有重要的现实意义。然而，如何引导水平纳米线沿z方向延伸并倾斜生长仍然是一个挑战。在本文中，我们报道了在 c 面 Al ₂ O ₃衬底上生长的规则和水平的 β-Ga ₂ O ₃纳米结构，以及 β-Ga ₂ O ₃的演化纳米线通过化学气相沉积（CVD）方法从水平生长到斜向上生长。使用场发射扫描电子显微镜、场发射透射电子显微镜、X 射线衍射、拉曼光谱和光致发光光谱研究合成的 β-Ga ₂ O ₃纳米线的形貌、结构、成分和光学性质. 由于Au催化剂生长界面的变化，β-Ga ₂ O ₃纳米线的生长有四种不同的生长模式。与其他常见的 Ga ₂ O ₃生长方法相比，本研究报告的制备路线更简单、更通用且成本更低 纳米材料，这些关于纳米线生长演变的研究可以为纳米线生长方向的改变和简化平面器件加工技术提供参考。