The composition of anodic sulfidization layers of GaSb and InAs, prepared by electrochemistry anodic sulfidization, are investigated by X-ray photoelectron spectroscopy (XPS). The result of composition profile of GaSb anodic sulfidization samples, studied by XPS and Ar + etching, indicates that the anodic sulfidization layers contains not only sulfide, but also oxides and oxysulfide. The oxide/oxysulfide is sandwiched by sulfide layer and GaSb. While for the InAs anodic sulfidization sample, the whole anodic sulfidization layer of InAs is composed of oxysulfide and oxide. The oxide is sandwiched by oxysulfide layer and InAs. Moreover, long-wave InAs/GaSb superlattice IR detectors are fabricated to confirm the effect of anodic sulfidization layer on reduction the leakage current. The current–voltage (I-V) result indicates that the dark current of detector with anodic sulfidization layer is more than three orders of magnitude lower than that of without anodic sulfidization layer.

用 X 射线光电子能谱 (XPS) 研究了通过电化学阳极硫化制备的 GaSb 和 InAs 阳极硫化层的组成。通过XPS和Ar + 蚀刻研究GaSb阳极硫化样品的成分分布结果表明，阳极硫化层不仅含有硫化物，还含有氧化物和氧硫化物。氧化物/氧硫化物被硫化物层和GaSb夹在中间。而对于 InAs 阳极硫化样品，InAs 的整个阳极硫化层由氧硫化物和氧化物组成。氧化物被氧硫化物层和 InAs 夹在中间。此外，还制作了长波 InAs / GaSb 超晶格红外探测器，以确认阳极硫化层对降低漏电流的影响。