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Electrochromic Behavior of Vanadium Pentoxide Thin Films Prepared by a Sol–Gel Spin Coating Process
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-07-10 , DOI: 10.1002/pssa.202100282
A. Carolin Amala 1 , R. Vignesh 1 , G.V. Geetha 1 , R. Sivakumar 2
Affiliation  

Herein, the synthesis of vanadium oxide thin films with high electrochromic coloration efficiency through a simple sol–gel spin coating technique is reported. The structural studies confirm the formation of V2O3V2O5 mixed phase at 250 °C and the pure β-V2O5 phase at 350 and 450 °C. The decrease in optical bandgap, refractive index, and extinction coefficient improves the transmission ability of the films at higher temperatures. The photoluminescence emission peak observed at 553 nm is due to the recombination of electron–hole pair intrinsic transition from the lowest split-off V 3d band to the O 2p valence band. The tuning of surface morphology from rod to platelet structure may be due to the higher annealing temperature which assists the disorder movement of the particles. The observed V 2p core levels confirm the existence of V5+ oxidation state with the splitting of 7.2 eV. The electrochromic behavior of vanadium oxide film is detected in 0.5 m LiClO4 in propylene carbonate electrolyte solution. The results show that the film annealed at 450 °C exhibits high coloration efficiency of 110.98 cm2 C−1, good reversibility of 99%, and faster switching speed for bleaching (2.1 s) and coloration (2.4 s) processes.

中文翻译:

溶胶-凝胶旋涂法制备的五氧化二钒薄膜的电致变色行为

本文报道了通过简单的溶胶-凝胶旋涂技术合成具有高电致变色着色效率的氧化钒薄膜。结构研究证实了在 250 °C 下形成了 V 2 O 3 V 2 O 5混合相,在 350 和 450 °C 下形成了纯 β-V 2 O 5相。光学带隙、折射率和消光系数的降低提高了薄膜在较高温度下的传输能力。在 553 nm 处观察到的光致发光发射峰是由于电子-空穴对从最低分裂 V 3 d带到 O 2 p 的本征跃迁的复合价带。从棒状结构到片状结构的表面形态的调整可能是由于较高的退火温度有助于粒子的无序运动。观察到的 V 2 p核心水平证实了 V 5+氧化态的存在,分裂为 7.2 eV。在碳酸亚丙酯电解液中的0.5 m LiClO 4中检测钒氧化物薄膜的电致变色行为 。结果表明,在 450 °C 下退火的薄膜表现出 110.98 cm 2  C -1 的高着色效率,99% 的良好可逆性,以及更快的漂白(2.1 s)和着色(2.4 s)过程切换速度。
更新日期:2021-07-10
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