We describe our work on tungsten disilicide film deposition by planar magnetron sputtering at low operating gas pressure (down to 0.08 Pa). The sputter target was a tungsten disilicide composite with diameter 125 mm, and the DC magnetron current 0.1–1 A. We have explored the dependence of film homogeneity over the 100 mm diameter substrate on substrate temperature and distance from the magnetron, and the spatial distribution of ion current density and the effect of operating pressure on the roughness and resistivity of the films.

中文翻译：

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超低工作压力下直流磁控溅射沉积二硅化钨薄膜

我们描述了我们在低工作气压（低至 0.08 Pa）下通过平面磁控溅射沉积二硅化钨薄膜的工作。溅射靶是直径为 125 mm 的二硅化钨复合材料，直流磁控管电流为 0.1-1 A。我们已经探索了 100 mm 直径衬底上的薄膜均匀性对衬底温度和距磁控管距离的依赖性，以及空间分布离子电流密度和操作压力对薄膜粗糙度和电阻率的影响。