The intersubband scattering rate for wurtzite (WZ) strain-compensated InGaN/InAlN quantum well (QW) structures grown on GaN substrate is investigated theoretically as functions of the sheet carrier density. The intersubband scattering rate of the strain-compensated InGaN/InAlN QW structure is found to be slightly smaller than that of the conventional GaN/AlN QW structure. The intersubband relaxation time for electron gradually increases with increasing carrier density. This can be explained by the fact that the inverse screening length becomes large owing to an increased quasi-Fermi level. The strain-compensated InGaN/InAlN QW structure shows larger relaxation time than conventional GaN/AlN QW structure.

从理论上研究了生长在 GaN 衬底上的纤锌矿 (WZ) 应变补偿 InGaN/InAlN 量子阱 (QW) 结构的子带间散射率作为片状载流子密度的函数。发现应变补偿 InGaN/InAlN QW 结构的子带间散射率略小于传统 GaN/AlN QW 结构的子带间散射率。随着载流子密度的增加，电子的子带间弛豫时间逐渐增加。这可以解释为，由于准费米能级增加，逆屏蔽长度变大。应变补偿 InGaN/InAlN QW 结构显示出比传统 GaN/AlN QW 结构更大的弛豫时间。