Integrated photonics based on silicon has drawn a lot of interests, since it is able to provide compact solution for functional devices, and its fabrication process is compatible with the mature complementary metal-oxide-semiconductor (CMOS) fabrication technology. In the meanwhile, silicon material itself has a few limitations, including an indirect bandgap of 1.1 eV, transparency wavelength of >1.1 μm, and insignificant second-order nonlinear optical property. Aluminum nitride (AlN), as a CMOS-compatible material, can overcome these limitations. It has a wide bandgap of 6.2 eV, a broad transparency window covering from ultraviolet to mid-infrared, and a significant second-order nonlinear optical effect. Furthermore, it also exhibits piezoelectric and pyroelectric effects, which enable it to be utilized for optomechanical devices and pyroelectric photodetectors, respectively. In this review, the recent research works on integrated AlN photonics in the past decade have been summarized. The related material properties of AlN have been covered. After that, the demonstrated functional devices, including linear optical devices, optomechanical devices, emitters, photodetectors, metasurfaces, and nonlinear optical devices, are presented. Last but not the least, the summary and future outlook for the AlN-based integrated photonics are provided.

中文翻译：

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氮化铝集成光子学：综述

基于硅的集成光子学引起了很多兴趣，因为它能够为功能器件提供紧凑的解决方案，并且其制造工艺与成熟的互补金属氧化物半导体（CMOS）制造技术兼容。同时，硅材料本身也有一些局限性，包括 1.1 eV 的间接带隙、> 1.1 μm 的透明波长和微不足道的二阶非线性光学特性。氮化铝 (AlN) 作为 CMOS 兼容材料可以克服这些限制。它具有 6.2 eV 的宽带隙，从紫外到中红外的宽透明窗口，以及显着的二阶非线性光学效应。此外，它还表现出压电和热电效应，这使其能够分别用于光机械设备和热释电光电探测器。在这篇综述中，总结了过去十年中集成 AlN 光子学的最新研究工作。已经涵盖了 AlN 的相关材料特性。之后，展示了演示的功能器件，包括线性光学器件、光机械器件、发射器、光电探测器、超表面和非线性光学器件。最后但并非最不重要的一点是，提供了基于 AlN 的集成光子学的总结和未来展望。介绍了光机械设备、发射器、光电探测器、超表面和非线性光学设备。最后但并非最不重要的一点是，提供了基于 AlN 的集成光子学的总结和未来展望。介绍了光机械设备、发射器、光电探测器、超表面和非线性光学设备。最后但并非最不重要的一点是，提供了基于 AlN 的集成光子学的总结和未来展望。