Molecular dynamics (MD) is used to simulate cascade collision in gallium arsenide (GaAs) under different temperatures (300–900 K). During the entire simulation, the primary knock-on atom (PKA) is incident at a special angle, and its energy (E_PKA) is within 10 keV. The simulation results are found to be reasonable based on the NRT equation and show that high E_PKA causes direct damage, thereby increasing all evolution parameters such as the peak time (t_p), steady time (t_s), peak (N_p) number, and steady (N_s) number of defects. Compared to E_PKA, high temperatures reduce N_s of Frenkel pairs and increase the threshold displacement energy (E_d), during which Ga defects occupy the main part. It is also found that the difference between Ga and As vacancy-interstitial pairs on the amount makes t_p of Ga_As defects longer than As_Ga defects, leading to a significant delay in antisite defects as temperature increases. Regarding clusters, high temperatures can promote the transformation of large clusters to isolated point defects for the vacancies, while only the transformation of large and small clusters is observed in the interstitials.

分子动力学 (MD) 用于模拟不同温度 (300–900 K) 下砷化镓 (GaAs) 的级联碰撞。在整个模拟过程中，初级碰撞原子 (PKA) 以特殊角度入射，其能量 ( E _PKA ) 在 10 keV 以内。根据 NRT 方程发现模拟结果是合理的，表明高E _PKA导致直接损伤，从而增加了所有演化参数，如峰值时间（t _p）、稳定时间（t _s）、峰值（N _p）数量和稳定 ( N _s ) 缺陷数。与E _PKA相比，高温降低了Frenkel 对N _s并增加阈值位移能 ( E _d )，在此期间 Ga 缺陷占据主要部分。还发现Ga和As空位-填隙对在数量上的差异使得Ga _As缺陷的t _p长于As _Ga缺陷，导致反位缺陷随着温度升高而显着延迟。对于团簇，高温可以促进大团簇向空位孤立点缺陷的转变，而在间隙中仅观察到大小团簇的转变。