AlGaN offers new opportunities for the development of the solid-state ultraviolet (UV) luminescence, detectors and high-power electronic devices, however, problems such as low growth rate and poor crystallization quality are common in the growing process of AlGaN material. In this paper, a new reaction cavity for high-temperature MOCVD AlGaN growth was carried out through the research of resistance heated, and the thermal field of high-temperature MOCVD growth was numerically simulated. Based on the high-temperature MOCVD reaction cavity, an orthogonal experimental method was used to simulate the process parameters, and the range, variance and matrix analysis were conducted on the calculation results. The finite element analysis was conducted on the temperature field, pressure field, velocity field, and the high-temperature MOCVD AlGaN growth model was established.

中文翻译：

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用于高温 MOCVD AlGaN 生长的新型反应腔的设计和工艺优化

AlGaN为固态紫外（UV）发光器件、探测器和大功率电子器件的发展提供了新的机遇，但在AlGaN材料的生长过程中普遍存在生长速率低、结晶质量差等问题。本文通过对电阻加热的研究，建立了一种用于高温MOCVD AlGaN生长的新型反应腔，并对高温MOCVD生长的热场进行了数值模拟。以高温MOCVD反应腔为基础，采用正交实验方法模拟工艺参数，并对计算结果进行极差、方差和矩阵分析。对温度场、压力场、速度场、