BaTiO3 (BTO) ferroelectric thin films are prepared by the sol-gel method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied. The photoluminescence (PL) of the BTO ferroelectric film is attributed to the structure. The ferroelectric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139, 0.1627). EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm?470 nm. This means the amorphous ferroelectric thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 ?C?400 ?C). It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.

中文翻译：

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非晶BaTiO3铁电薄膜InGaN/GaN多量子阱发光二极管的制备及光学性能

BaTiO3(BTO)铁电薄膜是通过溶胶-凝胶法制备的。研究了具有非晶 BTO 铁电薄膜的 InGaN/GaN 多量子阱发光二极管 (LED) 的制备和光学特性。BTO铁电膜的光致发光（PL）归因于该结构。在 673 K 下退火 8 h 的铁电薄膜具有更好的 PL 性能。从 580 nm 到 610 nm 的峰宽约为 30 nm，朝向黄色区域。具有 150 nm 厚非晶 BTO 铁电薄膜的 InGaN/GaN 多量子阱 LED 的混合电致发光 (EL) 光谱显示蓝白光。EL 的 Commission Internationale De L'Eclairage (CIE) 坐标为 (0.2139, 0.1627)。EL 波长和强度取决于成分，铁电薄膜的微观结构和厚度。非晶BTO薄膜在450nm~470nm波长下的透光率约为93%。这意味着非晶铁电薄膜可以输出更多的蓝光和发射光。此外，非晶铁电薄膜可以在没有粘合剂的情况下直接制造并在更高的温度（200℃～400℃）下使用。非常有利于简化制备工艺，降低LED的散热要求。这提供了一种研究 LED 的新方法。非晶铁电薄膜可以在没有粘合剂的情况下直接制造，并可以在更高的温度下使用（200?C?400?C）。非常有利于简化制备工艺，降低LED的散热要求。这提供了一种研究 LED 的新方法。非晶铁电薄膜可以在没有粘合剂的情况下直接制造，并可以在更高的温度下使用（200?C?400?C）。非常有利于简化制备工艺，降低LED的散热要求。这提供了一种研究 LED 的新方法。