Abstract. We reduce the problem of asymmetrical distribution of carriers (electrons and holes) by engineering the last barrier and electron blocking layer (EBL) of green indium gallium nitride (InGaN)-based multiquantum well light-emitting diodes. We employ stair-engineered EBL with a graded InGaN last quantum barrier to enhance the device performance. The efficiency droop ratio of the proposed device is ∼15 % at 100 A / cm2. Similarly, the light output power is also enhanced by about three times, as compared to the reference structure. In addition, a carrier transport issue across the active region is also mitigated in our design.

中文翻译：

---

采用成分渐变的最后量子势垒和电子阻挡层来增强内部量子效率

摘要。我们通过设计绿色铟镓氮化物 (InGaN) 基多量子阱发光二极管的最后一个势垒和电子阻挡层 (EBL)，减少了载流子（电子和空穴）不对称分布的问题。我们采用阶梯式 EBL 和分级 InGaN 最后量子势垒来提高器件性能。在 100 A / cm2 时，所提出的器件的效率下降率约为 15%。类似地，与参考结构相比，光输出功率也提高了约三倍。此外，我们的设计还缓解了跨活动区域的载流子传输问题。