Abstract Recently, a hybrid graphene/poly-BrNpA phosphor structure was used to fabricate rewritable p-n junction photodiode responsive to visible light. In this process, photoisomerization occurred under moderate ultraviolet (UV) irradiation (λ = 365 nm, optical intensity IUV = 1.318 μW μm−2), and the subsequent water (H2O) molecule adsorption facilitate charge transfer at the interface. In this study, we explore the feasibility of making UV photodetector based on the hybrid graphene/poly-BrNpA field-effect transistor. The incident UV light (λ = 365 nm, IUV≤1.81 × 10−4 μW μm−2), which is at least four orders weaker than that used to induce observable photoisomerization in the phosphor, is mostly absorbed to create photo-induced electron-hole pairs. The subsequent separation and transfer of the photo-induced electrons to graphene contribute to high photocurrent by the photogating effect. The photodetector has a responsivity and specific detectivity up to 159 A W−1 and 1.55 × 1011 Jones, respectively, when biased at VDS = 1 V. The photodetector has a slow response, especially to UV shut-off with the fall time τF up to 881 s. By virtue of H2O molecule adsorption, τF can be reduced to 6.6 s by accelerating the reversion and recombination of electrons with the photo-induced holes trapped in the poly-BrNpA film through introducing defect states. This work brings a new perspective for developing photodetectors through combining the functional two-dimensional materials and phosphors.

中文翻译：

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基于混合石墨烯/磷光体场效应晶体管的紫外光电探测器

摘要 最近，一种混合​​石墨烯/聚 BrNpA 荧光粉结构被用于制造响应可见光的可重写 pn 结光电二极管。在这个过程中，光异构化发生在中度紫外线（UV）照射下（λ = 365 nm，光强度 IUV = 1.318 μW μm-2），随后的水（H2O）分子吸附促进了界面处的电荷转移。在这项研究中，我们探索了基于混合石墨烯/多聚 BrNpA 场效应晶体管制作紫外光电探测器的可行性。入射紫外光（λ = 365 nm，IUV≤1.81 × 10−4 μW μm−2），比用于诱导荧光体中可观察到的光异构化至少弱四个数量级，主要被吸收以产生光诱导电子-孔对。随后光生电​​子的分离和转移到石墨烯通过光门控效应产生高光电流。当偏置在 VDS = 1 V 时，光电探测器的响应度和比探测度分别高达 159 AW−1 和 1.55 × 1011 Jones。光电探测器响应缓慢，尤其是对紫外线关闭时下降时间 τF 高达881 秒。凭借 H2O 分子的吸附，通过引入缺陷态，加速电子与聚 BrNpA 膜中捕获的光致空穴的逆转和复合，可以将 τF 降低到 6.6 s。这项工作通过结合功能二维材料和荧光粉为开发光电探测器带来了新的视角。当偏置在 VDS = 1 V 时，光电探测器的响应度和比探测度分别高达 159 AW−1 和 1.55 × 1011 Jones。光电探测器响应缓慢，尤其是对紫外线关闭时下降时间 τF 高达881 秒。凭借 H2O 分子的吸附，通过引入缺陷态，加速电子与聚 BrNpA 膜中捕获的光致空穴的逆转和复合，可以将 τF 降低到 6.6 s。这项工作通过结合功能二维材料和荧光粉为开发光电探测器带来了新的视角。当偏置在 VDS = 1 V 时，光电探测器的响应度和比探测度分别高达 159 AW−1 和 1.55 × 1011 Jones。光电探测器响应缓慢，尤其是对紫外线关闭时下降时间 τF 高达881 秒。凭借 H2O 分子的吸附，通过引入缺陷态，加速电子与聚 BrNpA 膜中捕获的光致空穴的逆转和复合，可以将 τF 降低到 6.6 s。这项工作通过结合功能二维材料和荧光粉为开发光电探测器带来了新的视角。通过引入缺陷态，加速电子与捕获在聚 BrNpA 膜中的光致空穴的逆转和复合，从而在 6 s 内完成。这项工作通过结合功能二维材料和荧光粉为开发光电探测器带来了新的视角。通过引入缺陷态，加速电子与捕获在聚 BrNpA 膜中的光致空穴的反转和复合，从而在 6 s 内完成。这项工作通过结合功能二维材料和荧光粉为开发光电探测器带来了新的视角。