The SiO2/SiNx dielectric film stacks deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) are employed on the top of the oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The reflecting mirror characteristics of the dielectric films are measured with varying numbers of pairs from 4 to 12. The prepared devices have low threshold current of 0.3 mA, single-mode peak power of 1.4 mW at room temperature. The thermal resistance of the device depending on ambient temperature is estimated according to the relationship of wavelength shift and dissipated power, allowing us to extract the actual temperature in active region and the temperature dependence of the output characteristics of the VCSEL. The beam property of the device is characterized by the far field pattern (FFP). Depending on the drive current, the average divergence angles of the output beam estimated from the full-width-half-maximum (FWHM) of the FFP varies between 20.4° and 21.2°. Furthermore, polarization-controlled single mode emission is achieved by introducing a built-in grating into the VCSEL with orthogonal polarization suppression ratio (OPSR) around 19 dB.

中文翻译：

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具有电介质 DBR 镜的低阈值单基模 VCSEL 的制造和表征


通过电感耦合等离子体化学气相沉积 (ICP-CVD) 沉积的 SiO2/SiNx 介电薄膜叠层用于氧化物限制垂直腔表面发射激光器 (VCSEL) 的顶部。采用 4 至 12 个不同的对数来测量介电膜的反射镜特性。所制备的器件在室温下具有 0.3 mA 的低阈值电流、1.4 mW 的单模峰值功率。根据波长偏移和耗散功率的关系来估计取决于环境温度的器件热阻，从而使我们能够提取有源区域的实际温度以及 VCSEL 输出特性的温度依赖性。该器件的光束特性通过远场方向图 (FFP) 来表征。根据驱动电流的不同，根据 FFP 的半高全宽 (FWHM) 估算的输出光束的平均发散角在 20.4° 到 21.2° 之间变化。此外，通过在 VCSEL 中引入内置光栅，实现偏振控制单模发射，正交偏振抑制比 (OPSR) 约为 19 dB。