Perpendicular shape anisotropy spin-transfer-torque magnetic random-access memory (PSA-STT-MRAM) demonstrates high thermal stability when size is reduced to 20 nm, which gives a new way to improve the integrity of electronic devices. This long and narrow device also poses challenges in the device fabrication process, such as sample tilt and etching defects. We used a micromagnetic simulation method to investigate the relationship between those defects and device performance. The coercivity and critical switching current density of PSA-MRAM have been calculated and analyzed with micromagnetic simulation, a three-dimensional Stoner–Wohlfarth model, and spin-filter theory. Our results demonstrate how shape defects affect the performance of the PSA-MRAM and provide guidelines for practical realization of nanoscale PSA-MRAM.

中文翻译：

---

垂直形状各向异性纳米点的形状缺陷效应


垂直形状各向异性自旋转移矩磁性随机存取存储器（PSA-STT-MRAM）在尺寸减小至20 nm时表现出高热稳定性，这为提高电子设备的完整性提供了新方法。这种又长又窄的器件也给器件制造过程带来了挑战，例如样品倾斜和蚀刻缺陷。我们使用微磁模拟方法来研究这些缺陷与器件性能之间的关系。利用微磁模拟、三维Stoner-Wohlfarth模型和自旋滤波器理论计算和分析了PSA-MRAM的矫顽力和临界开关电流密度。我们的结果证明了形状缺陷如何影响 PSA-MRAM 的性能，并为纳米级 PSA-MRAM 的实际实现提供指导。