In this paper, the relationship between anisotropic magnetoresistance (AMR) and phase separation in La_0.4Pr_0.3Ca_0.3MnO₃ (LPCMO)/NGO films has been investigated. The films were grown on orthorhombic NGO (001) single crystal substrates by the pulsed laser deposition (PLD) method. The as-grown films were ex-situ annealed at 780 °C for 30 min in 400 mTorr oxygen pressures to clarify the effects of annealing on magnetoresistance (MR) and AMR. The X-ray diffraction (XRD) pattern confirmed that the substrate distance from the target is a key parameter for strong preferred crystallographic orientation growth. The temperature-dependent resistivity of the as-grown films revealed the coexistence of ferromagnetic and antiferromagnetic phases and the frozen glassy state at low temperatures. In the film with significant phase coexistence, the considerably large AMR and MR values of about 140% and 100% are achieved under the 5 kOe magnetic field. By tuning the target-substrate distance, different crystalline orientations of LPCMO can be obtained, and as a result, the metal-insulator transition (MIT) temperature, MR, and AMR can be modified.

在本文中，研究了La _0.4 Pr _0.3 Ca _0.3 MnO ₃ (LPCMO)/NGO 薄膜中各向异性磁阻(AMR)与相分离之间的关系。通过脉冲激光沉积 (PLD) 方法在正交 NGO (001) 单晶衬底上生长薄膜。将生长的薄膜在 780 °C 和 400 mTorr 氧压下异位退火 30 分钟，以阐明退火对磁阻(MR)和AMR 的影响。X 射线衍射 (XRD) 图案证实，衬底与目标的距离是强择优晶体取向生长的关键参数。生长薄膜的温度依赖性电阻率揭示了铁磁和反铁磁相的共存以及低温下的冻结玻璃态。在具有显着相共存的薄膜中，在 5 kOe 磁场下实现了约 140% 和 100%的相当大的AMR和MR值。通过调整目标-衬底距离，可以获得不同的 LPCMO 晶体取向，因此，可以修改金属绝缘体转变 (MIT) 温度、MR和AMR。