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Ultrahigh energy storage density in epitaxial AlN/ScN superlattices
Physical Review Materials ( IF 3.1 ) Pub Date : 2021-07-08 , DOI: 10.1103/physrevmaterials.5.l072401
Zhijun Jiang 1, 2, 3 , Bin Xu 4 , Hongjun Xiang 2, 5, 6 , L. Bellaiche 3
Affiliation  

Dielectric and antiferroelectric materials are particularly promising for high-power energy storage applications. However, relatively low energy density greatly hinders their usage in storage technologies. Here, we report first-principles-based calculations predicting that epitaxial and initially nonpolar AlN/ScN superlattices can achieve an ultrahigh energy density of up to 200J/cm3, accompanied by an ideal efficiency of 100%. We also show that high energy density requires that the system be neither too close nor too far from a ferroelectric phase transition under zero electric field. A phenomenological model is further proposed to rationalize such striking features.

中文翻译:

外延 AlN/ScN 超晶格中的超高能量存储密度

介电和反铁电材料在大功率储能应用中特别有前途。然而,相对较低的能量密度极大地阻碍了它们在存储技术中的应用。在这里,我们报告了基于第一性原理的计算,预测外延和初始非极性 AlN/ScN 超晶格可以实现高达200J/厘米3,伴随着 100% 的理想效率。我们还表明,高能量密度要求系统离零电场下的铁电相变既不太近也不太远。进一步提出了一个现象学模型来合理化这些惊人的特征。
更新日期:2021-07-08
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