We reduced the operating voltage of AlGaN homojunction tunnel junction (TJ) deep-ultraviolet (UV) light-emitting diodes (LEDs) by two approaches: the suppression of carbon incorporation and the doping of a high concentration of silicon in an n⁺-AlGaN layer. The AlGaN homojunction TJ deep-UV LEDs had a significantly reduced forward voltage upon suppressing the incorporation of carbon in the n⁺-AlGaN layer. The suppression of electron compensation by carbon in nitrogen sites and the doping of a high concentration of silicon in an n⁺-AlGaN layer are important for reducing the operating voltage of AlGaN homojunction TJ deep-UV LEDs.

中文翻译：

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通过控制杂质浓度降低 AlGaN 同质结隧道结深紫外发光二极管的工作电压

我们通过两种方法降低了 AlGaN 同质结隧道结 (TJ) 深紫外 (UV) 发光二极管 (LED) 的工作电压：抑制碳掺入和在 n ⁺ -AlGaN 中掺杂高浓度硅层。在抑制碳掺入 n ⁺ -AlGaN 层后，AlGaN 同质结 TJ 深紫外 LED 具有显着降低的正向电压。氮位点中碳对电子补偿的抑制和 n ⁺ -AlGaN 层中高浓度硅的掺杂对于降低 AlGaN 同质结 TJ 深紫外 LED 的工作电压很重要。