This article proposes a parallel dual-metal-gate structure (PDM) of AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-linearity applications. Cancellation of the third-order derivative of the $I_{\text{ds}}–V_{\text{gs}}$ curve ($g_{\mathrm{m}}^{″})$is achieved by splitting the device into two subcells in parallel with different gate metals. The two subcells have different threshold voltages. When the same bias voltage $V_{\text{gs}}$ is applied, the operating states of the two subcells are independently controlled by the gate bias voltages. The maximum transconductance ($g_{\mathrm{m},\text{peak}}$) of the conventional single-metal-gate (SMG) HEMT, double-metal-gate (DMG) HEMT, and PDM-HEMT is all comparable, whereas $g_{\mathrm{m}}^{″}$ of the proposed structure is 75% lower than that of the SMG HEMT and 47.8% lower than that of the DMG HEMT. The effects of the differences and width ratios of the work function on $g_{\mathrm{m}}^{″}$ are studied and compared, and a suitably designed PDM-HEMT that can considerably improve linearity without degrading other performance aspects is obtained. This research has significant implications for high-linearity applications.

中文翻译：

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用于 AlGaN/GaN 高电子迁移率晶体管高线性度应用的并行双金属栅极结构仿真

本文提出了一种用于高线性度应用的 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的并行双金属栅极结构 (PDM)。取消三阶导数${\mathrm{一世}}_{\text{ds}}——{伏}_{\text{GS}}$ 曲线 （$G_{\mathrm{米}}^{”})$是通过将器件分成两个子单元与不同的栅极金属平行来实现的。两个子单元具有不同的阈值电压。当偏置电压相同时${伏}_{\text{GS}}$应用时，两个子单元的工作状态由栅极偏置电压独立控制。最大跨导（$G_{\mathrm{米},\text{顶峰}}$) 传统的单金属栅极 (SMG) HEMT、双金属栅极 (DMG) HEMT 和 PDM-HEMT 都具有可比性，而 $G_{\mathrm{米}}^{”}$所提出的结构比 SMG HEMT 低 75%，比 DMG HEMT 低 47.8%。功函数的差异和宽度比对$G_{\mathrm{米}}^{”}$研究和比较，并获得了一个适当设计的 PDM-HEMT，它可以在不降低其他性能方面显着提高线性度的情况下获得。这项研究对高线性度应用具有重要意义。