Nanostructured CdS Buffer Layer Fabricated with a Simple Spin-Coating Method for Sb2S3 Solar Cells,Physica Status Solidi (A) - Applications and Materials Science

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Nanostructured CdS Buffer Layer Fabricated with a Simple Spin-Coating Method for Sb2S3 Solar Cells
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-07-07 , DOI: 10.1002/pssa.202100337
Xingyun Liu ₁ , Zitong Feng ₁ , Yuxia Sun ₂ , Mingzhu Su ₁ , Ying Liu ₃ , Haiqiang Liu ₁ , Jian Wen ₁ , Hongri Liu ₁

Affiliation

Nanostructured CdS thin films are fabricated by a simple spin-coating method at various annealing temperatures from 200 to 350 °C. CdS films of 80 nm thick, which are composed of nanoparticles or flakes with size ≈20–200 nm, are obtained. The nanostructured morphology is identified by scanning electron microscopy measurement. Sb₂S₃ films with large-sized grains are deposited on the CdS thin films with hydrothermal method, in which CdS is adopted as electron transport layer (ETL) for Sb₂S₃ solar cells. The power conversion efficiency (PCE) is 4.88% for the best solar cell based on nanostructured CdS ETLs. Herein, a very facile and effective route to fabricate nanostructured CdS buffer layer for Sb₂S₃ solar cells is offered.

中文翻译：

用简单的旋涂法制备 Sb2S3 太阳能电池的纳米结构 CdS 缓冲层

纳米结构的 CdS 薄膜是通过简单的旋涂方法在 200 到 350°C 的各种退火温度下制造的。获得了 80 nm 厚的 CdS 薄膜，该薄膜由尺寸 ≈20-200 nm 的纳米颗粒或薄片组成。通过扫描电子显微镜测量确定纳米结构的形态。采用水热法在CdS薄膜上沉积大尺寸Sb ₂ S ₃薄膜，其中CdS作为Sb ₂ S ₃太阳能电池的电子传输层（ETL）。基于纳米结构 CdS ETL 的最佳太阳能电池的功率转换效率 (PCE) 为 4.88%。在此，为 Sb ₂ S制造纳米结构的 CdS 缓冲层提供了一种非常简单有效的途径_{提供 3 个}太阳能电池。

更新日期：2021-07-07

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