Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are susceptible to unexpected short-circuit (SC) impacts in high-voltage inverters operating in complex applications. This paper presents a research on the effect of high-side blocking and classical low-side blocking on short circuit characteristics. Simulation of the steady-state electric field, which equivalent to the states after LSB and HSB, was performed. The obvious electric field concentration appears in the source-drain pn junction of the DUT after the LSB, and is much larger in value than that appearing in the DUT after the HSB. DUTs, which failed, were decapsulated from the side of the drain to allow for an emission microscope (EMMI) investigation. In response to the results of the EMMI investigation, it was discussed that the occurrence of source leakage was caused by electric field concentration after the DUT is blocked. The hazards of this failure and the expected further research are mentioned simply.

在复杂应用中运行的高压逆变器中，碳化硅 (SiC) 金属氧化物半导体场效应晶体管 (MOSFET) 容易受到意外短路 (SC) 影响。本文研究了高侧阻断和经典低侧阻断对短路特性的影响。执行等效于 LSB 和 HSB 之后的状态的稳态电场模拟。LSB后DUT源漏pn结处出现明显的电场集中，其值远大于HSB后DUT出现的电场集中。失败的 DUT 从排水管一侧拆封，以便进行发射显微镜 (EMMI) 调查。针对 EMMI 调查的结果，讨论了源泄漏的发生是由于DUT被阻断后电场集中引起的。简单地提到了这种失败的危害和预期的进一步研究。