Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS₂, remains cumbersome. Here we report a facile strategy for the fabrication of highly strained MoS₂ via chalcogenide substitution reaction (CSR) of MoTe₂ with lattice inheritance. The MoS₂ resulting from the sulfurized MoTe₂ sustains ultra large in-plane strain (approaching its strength limit ~10%) with great homogeneity. Furthermore, the strain can be deterministically and continuously tuned to ~1.5% by simply varying the processing temperature. Thanks to the fine control of our CSR process, we demonstrate a heterostructure of strained MoS₂/MoTe₂ with abrupt interface. Finally, we verify that such a large strain potentially allows the modulation of MoS₂ bandgap over an ultra-broad range (~1 eV). Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.

应变工程是一种很有前途的调整二维 (2D) 材料电子特性的方法，由于其原子厚度，这些材料能够承受巨大的应变。_{然而，对这些二维材料（包括典型的半导体 MoS 2}）施加大而均匀的应变仍然很麻烦。在这里，我们报告了一种通过具有晶格继承的 MoTe ₂硫族化物取代反应 (CSR)制造高应变 MoS _{2的简便策略。}硫化MoTe 2 生成_的MoS ₂承受超大的面内应变（接近其强度极限 ~10%），具有很高的均匀性。此外，通过简单地改变加工温度，应变可以确定性地连续调整到 ~1.5%。由于我们对 CSR 过程的精细控制，我们展示了具有突变界面的应变 MoS ₂ /MoTe _{2异质结构。}最后，我们验证了如此大的应变可能允许在超宽范围 (~1 eV) 内调制 MoS _2带隙。我们的可控 CSR 策略为制造用于设备应用的高应变二维材料铺平了道路。