The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS₂). A major obstacle for the industrial production of MoS₂-based devices lies in the growth techniques. These must ensure the reliable fabrication of MoS₂ with tailored 2D properties to allow for the typical direct bandgap of 1.9 eV, while maintaining large-area growth and device compatibility. In this work, we used a versatile and industrially scalable MoS₂ growth method based on ionized jet deposition and annealing at 250 °C, through which a 3D stable and scalable material exhibiting excellent electronic and optical properties of 2D MoS₂ is synthesized. The thickness-related limit, i.e., the desired optical and electronic properties being limited to 2D single/few-layered MoS₂, was overcome in the thin film through the formation of encapsulated highly crystalline 2D MoS₂ nanosheets exhibiting a bandgap of 1.9 eV and sharp optical emission. The newly synthesized 2D-in-3D MoS₂ structure will facilitate device compatibility of 2D materials and confer superior optoelectronic device function.

电子设备的持续小型化促进了新的后硅二维 (2D) 半导体的发展，例如过渡金属二硫属化物，二硫化钼 (MoS ₂ )是最突出的材料之一。基于MoS ₂的器件的工业生产的主要障碍在于生长技术。这些必须确保可靠地制造具有定制 2D 特性的 MoS ₂，以允许 1.9 eV 的典型直接带隙，同时保持大面积生长和设备兼容性。在这项工作中，我们使用了多功能且工业可扩展的 MoS ₂基于电离射流沉积和 250°C 退火的生长方法，通过该方法合成了具有 2D MoS ₂优异电子和光学性能的 3D 稳定和可扩展材料。厚度相关的限制，即所需的光学和电子特性仅限于 2D 单层/几层 MoS ₂，通过形成封装的高结晶 2D MoS ₂纳米片，显示出 1.9 eV 的带隙和尖锐的光发射。新合成的2D-in-3D MoS ₂结构将促进2D材料的器件兼容性并赋予优异的光电器件功能。