Purpose

The purpose of this paper is to investigate the effect of growth temperature on the evolution of indium incorporation and the growth process of InGaN/GaN heterostructures.

Design/methodology/approach

To examine this effect, the InGaN/GaN heterostructures were grown using Taiyo Nippon Sanso Corporation metal-organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.4 µm undoped-GaN (ud-GaN) and GaN nucleation layer, respectively, over a commercial 2” c-plane flat sapphire substrate. The InGaN layers were grown at different temperature settings ranging from 860°C to 820°C in a step of 20°C. The details of structural, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy and ultraviolet-visible (UV-Vis) spectrophotometer, respectively.

Findings

InGaN/GaN heterostructure with indium composition up to 10.9% has been successfully grown using the MOCVD technique without any phase separation detected within the sensitivity of the instrument. Indium compositions were estimated through simulation fitting of the XRD curve and calculation of Vegard’s law from UV-Vis measurement. The thickness of the structures was determined using the Swanepoel method and the FE-SEM cross-section image.

Originality/value

This paper report on the effect of MOCVD growth temperature on the growth process of InGaN/GaN heterostructure, which is of interest in solid-state lighting technology, especially in light-emitting diodes and solar cell application.

中文翻译：

---

生长温度对 InGaN/GaN 异质结构 MOCVD 生长的铟掺入过程的作用

目的

本文的目的是研究生长温度对铟掺入演变和 InGaN/GaN 异质结构生长过程的影响。

设计/方法/方法

为了检查这种效应，使用 Taiyo Nippon Sanso Corporation 金属有机化学气相沉积 (MOCVD) SR4000-HT 系统生长 InGaN/GaN 异质结构。InGaN/GaN 异质结构分别在 3.4 µm 未掺杂的 GaN (ud-GaN) 和 GaN 成核层上外延生长，位于商用 2 英寸 c 面平面蓝宝石衬底上。InGaN 层在 860°C 至 820°C 的不同温度设置下以 20°C 的步长生长。分别使用 X 射线衍射 (XRD)、场发射扫描电子显微镜 (FE-SEM)、原子力显微镜和紫外-可见 (UV-Vis) 分光光度计研究了结构、表面形貌和光学性能的细节。

发现

使用 MOCVD 技术成功生长了铟成分高达 10.9% 的 InGaN/GaN 异质结构，而没有在仪器的灵敏度范围内检测到任何相分离。通过 XRD 曲线的模拟拟合和来自 UV-Vis 测量的 Vegard 定律的计算来估计铟成分。使用 Swanepoel 方法和 FE-SEM 横截面图像确定结构的厚度。

原创性/价值

本文报告了 MOCVD 生长温度对 InGaN/GaN 异质结构生长过程的影响，这在固态照明技术中很受关注，特别是在发光二极管和太阳能电池应用中。