A ZnMgO and ZnO double-layered structure was prepared to create a stepwise interfacial electronic structure to improve the electron-injection and electron-transport behaviors in quantum-dot light-emitting diodes (QLEDs). The current density of the electron-only device (EOD) with ZnMgO/ZnO was higher than that of the EOD with only ZnMgO. The detailed QLED interfacial electronic structure was measured using X-ray and ultraviolet photoelectron spectroscopy. A stepwise interfacial electronic structure for electron injection and electron transport was observed connecting the aluminum cathode to the ZnMgO conduction band minimum (CBM) via the ZnO CBM. The QLEDs with the ZnMgO/ZnO double electron transport layer showed an improved performance, with a maximum luminance and current efficiency of 90,892 cd m⁻² and 19.2 cd A⁻¹, respectively. Moreover, the turn-on voltage of the device was significantly reduced to 2.6 V due to the stepwise interfacial electronic structure between the aluminum cathode and ZnMgO CBM. This research provides a useful method for developing highly efficient and low turn-on voltage QLEDs using a ZnMgO/ZnO double ETL for next-generation display.

制备了 ZnMgO 和 ZnO 双层结构以创建阶梯式界面电子结构，以改善量子点发光二极管 (QLED) 中的电子注入和电子传输行为。具有 ZnMgO/ZnO 的纯电子器件 (EOD) 的电流密度高于仅具有 ZnMgO 的 EOD。使用 X 射线和紫外光电子能谱测量详细的 QLED 界面电子结构。观察到用于电子注入和电子传输的逐步界面电子结构通过 ZnO CBM 将铝阴极连接到 ZnMgO 导带最小值 (CBM)。具有 ZnMgO/ZnO 双电子传输层的 QLED 显示出改进的性能，最大亮度和电流效率为 90,892 cd m ^-2和 19.2 cd A ^-1，分别。此外，由于铝阴极和 ZnMgO CBM 之间的阶梯式界面电子结构，器件的开启电压显着降低至 2.6 V。该研究为使用 ZnMgO/ZnO 双 ETL 开发用于下一代显示的高效、低开启电压 QLED 提供了一种有用的方法。