Topological surface-enhanced Raman scattering (T-SERS) is a phenomenon in which topological materials change the density of states (DOS) of the substrate through linear dispersion relation to boost photoinduced charge transfer and enhance Raman scattering. Through theoretical and experimental research, we show that the dispersion relation effect in topological materials is the main reason for T-SERS. In theory, the dispersion relation and dimension of the band structure will affect the distribution of DOS near the Fermi surface of substrates, and the change of DOS will lead to the different contribution of charge transfer for SERS. In experiments, the enhancement effect of topological insulators (Bi₂Se₃, Sb₂Te₃) and topological semimetal (PtSe₂) on the Raman scattering of various molecules are compared. Among these materials, PtSe₂ can achieve Raman enhancement of R6G molecules with the concentration of 10⁻⁹ M.

拓扑表面增强拉曼散射 (T-SERS) 是一种现象，其中拓扑材料通过线性色散关系改变基板的态密度 (DOS)，以促进光致电荷转移并增强拉曼散射。通过理论和实验研究，我们表明拓扑材料中的色散关系效应是 T-SERS 产生的主要原因。理论上，能带结构的色散关系和尺寸会影响衬底费米面附近DOS的分布，DOS的变化会导致电荷转移对SERS的贡献不同。在实验中，拓扑绝缘体（Bi ₂ Se ₃、Sb ₂ Te ₃) 和拓扑半金属 (PtSe ₂ ) 对各种分子的拉曼散射进行了比较。在这些材料中，PtSe ₂可以在10 ^-9 M的浓度下实现R6G 分子的拉曼增强。