The carrier concentration of the indium tin oxide (ITO) thin films can be enhanced by supplying extra conducting electrons with tin dopants. However, defects and impurities, which are rich around grain boundaries, result in strong carrier scattering. In this work, ITO films prepared by magnetron sputtering were subjected to supercritical carbon dioxide (SCCO₂) fluid treatment with different concentrations of InCl₃ solutions, In³⁺ ions were introduced in the grain boundaries for the purpose of regulating defects and impurities there. The photoelectric performance of ITO films was improved significantly after the SCCO₂ fluid treatments, which was interpreted for the effects of SCCO₂ on as-deposited ITO microstructures based on the experimental results of X-ray photoelectron spectroscopy and positron annihilation lifetime spectroscopy. Upon the SCCO₂ fluid treatment, the dehydration effect passivated the dangling bonds around the grain boundaries, meanwhile, the indium ions diffused into the grain boundaries, resulting in the formation of ITO-like lattice structure there.

氧化铟锡 (ITO) 薄膜的载流子浓度可以通过提供带有锡掺杂剂的额外导电电子来提高。然而，晶界周围的缺陷和杂质会导致强烈的载流子散射。在这项工作中，将磁控溅射制备的ITO薄膜用不同浓度的InCl ₃溶液进行超临界二氧化碳(SCCO ₂ )流体处理，在晶界引入In ³⁺离子以调节那里的缺陷和杂质。SCCO ₂流体处理后ITO薄膜的光电性能显着提高，这解释为SCCO ₂的影响基于 X 射线光电子能谱和正电子湮没寿命光谱的实验结果，对沉积态的 ITO 微结构进行了研究。SCCO ₂流体处理后，脱水效应钝化了晶界周围的悬空键，同时铟离子扩散到晶界中，导致在那里形成类似ITO的晶格结构。