We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities. In this work, we investigated the material and transport properties of p-NiO on GaN, and demonstrated its application as JTEs for GaN-on-Si Schottky barrier diodes (SBDs). p-NiO JTEs resulted in a similar ON-state behavior compared to a control SBD without any termination, while providing 1.9-higher breakdown voltage of 443V, the highest reported for SBDs on GaN-on-Si substrates.

我们报告了 p-NiO 层作为结终端扩展 (JTE) 的演示，用于实现高性能 GaN 功率器件。p-NiO 是通过射频溅射沉积的，这是一种灵活的工艺，可以实现高孔密度。在这项工作中，我们研究了 GaN 上 p-NiO 的材料和传输特性，并展示了其作为 GaN-on-Si 肖特基势垒二极管 (SBD) 的 JTE 的应用。与没有任何终止的对照 SBD 相比，p-NiO JTE 产生了类似的导通状态行为，同时提供了 1.9 倍的击穿电压，即 443V，这是 GaN-on-Si 衬底上 SBD 报告的最高值。