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Numerical investigation on photon energy absorption parameters for some Bi–Sn–Zn alloys in wide energy region
Pramana ( IF 1.9 ) Pub Date : 2021-07-05 , DOI: 10.1007/s12043-021-02137-6
Yogesh K Vermani 1 , Tejbir Singh 1
Affiliation  

The bismuth-based non-toxic and lead-free alloys have been investigated for their advanced photon attenuation and photon energy absorption characteristics over wide \(\upgamma \)-ray energy regime from 1 keV to 20 MeV. For this study, we selected five bismuth containing alloys with composition: Bi50Sn\({(50-x)}\)Znx where \(x=0, 10, 20, 30, 40 \,\hbox {wt}.\%\). The mass attenuation coefficient values computed by theoretical approach using the WinXCom software package show marked difference from the mass energy-absorption coefficient values particularly in the energy regime dominated by the Compton effect (CE). Photon interaction (attenuation) effective atomic number \((Z_{\mathrm {PIeff}}\)) and photon-energy absorption effective atomic number \((Z_{\mathrm {PEAeff}})\) values were compared for their mean, maximum and minimum values computed for these alloys. The optimum thickness range analysed using the attenuation and absorption coefficient values indicate saturation with respect to photon energy spanning Compton effect (CE) and pair-production (PP) processes. Kinetic energy released per unit mass of the absorbing material (KERMA) relative to air calculations indicated significant influence of the elemental composition of these alloys in the intermediate photon energy regime. We also performed calculations for the air-KERMA or exposure build-up factors of these Bi–Sn–Zn alloy compositions done within the framework of novel EXABCal programme code. The calculated exposure build-up factor was found to be minimum for the alloy composition Bi50Sn50. Present investigation of photon interaction and photon energy absorption characteristics would be of interest for addressing shielding efficiency of lead-free and environment friendly bismuth containing alloy systems.



中文翻译:

宽能区Bi-Sn-Zn合金光子能量吸收参数的数值研究

已经研究了铋基无毒和无铅合金在从 1 keV 到 20 MeV 的宽\(\upgamma \)射线能量范围内的先进光子衰减和光子能量吸收特性。在本研究中,我们选择了五种含铋合金,其成分为:Bi50Sn \({(50-x)}\) Zn x其中\(x=0, 10, 20, 30, 40 \,\hbox {wt}.\ %\)。使用 WinXCom 软件包通过理论方法计算的质量衰减系数值显示出与质量能量吸收系数值的显着差异,特别是在康普顿效应 (CE) 主导的能量范围内。光子相互作用(衰减)有效原子序数\((Z_{\mathrm {PIeff}}\)) 和光子能量吸收有效原子序数\((Z_{\mathrm {PEAeff}})\)对这些合金计算的平均值、最大值和最小值进行比较。使用衰减和吸收系数值分析的最佳厚度范围表明光子能量跨越康普顿效应 (CE) 和对产生 (PP) 过程的饱和。相对于空气计算,每单位质量的吸收材料 (KERMA) 释放的动能表明这些合金在中间光子能量范围内的元素组成有显着影响。我们还对这些 Bi-Sn-Zn 合金成分的空气 KERMA 或暴露累积因子进行了计算,该计算是在新型 EXABCal 程序代码的框架内完成的。发现计算的暴露累积因子对于合金成分 Bi50Sn50 是最小的。

更新日期:2021-07-05
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