Integrated circuits based on FinFET nanodevices suffer from thermal processes related to heat dissipation caused by phonon transport bottlenecks. In this work, we report a numerical study of quasi-ballistic transport behavior in 20 nm FinFET transistors. Using a mathematical formulation, numerically implemented by the finite element method, we successfully validate the transfer characteristics and temporal temperature evolution compared with experimental and numerical works. We found that the proposed model, given by a calibrated charge drift-diffusion model coupled with the enhanced ballistic diffusive heat transport equation, predicts the experimental I–V characteristics and the transient temperature evolution well. The error given by this comparison is less than 10% in the I_DS-V_GS and T-t characteristics, respectively. We show that the proposed equations provide an improved approximation compared to the dual-phase lag and the Cattaneo-Vernotte models. From an engineering viewpoint, we found that the self-heating is concentrated at the end of the channel region at the drain side; this phenomenon was confirmed from literature by experimental results.

基于 FinFET 纳米器件的集成电路受到声子传输瓶颈引起的与散热相关的热过程的影响。在这项工作中，我们报告了 20 nm FinFET 晶体管中准弹道传输行为的数值研究。使用由有限元方法数值实现的数学公式，与实验和数值工作相比，我们成功地验证了传递特性和时间温度演变。我们发现所提出的模型由校准的电荷漂移扩散模型加上增强的弹道扩散热传输方程给出，可以很好地预测实验 I-V 特性和瞬态温度演化。这个比较给出的误差在 I _DS -V _{GS 中}小于 10%和 Tt 特性。我们表明，与双相位滞后和 Cattaneo-Vernotte 模型相比，所提出的方程提供了改进的近似值。从工程角度，我们发现自热集中在漏极侧沟道区的末端；这一现象在文献中得到了实验结果的证实。