Elemental doping is the main means to regulate the phase transition of vanadium oxide (VO₂); however, the effects of low valence elemental (<4+) doping on the phase transition of VO₂ are still controversial. In the present work, Ni-doped VO₂ films were prepared on quartz glass by direct current reactive magnetron sputtering and subsequent annealing. With the increase of the Ni doping content, the phase transition temperature of heating (T_H) of the VO₂ films decreased from 73.4 °C to 52.4 °C. The temperature required for the occurrence of phase transition (T_b) was lower than T_MIT. Different from the undoped VO₂ film, the Ni-doped VO₂ films had a T_b of around 30 °C. XRD and Raman results revealed that some rutile VO₂ microcrystals appeared in the vanadium oxide films because of the lattice distortion by incorporated Ni. Hence, rutile VO₂ micro-crystallinities significantly facilitated the phase transition of monoclinic VO₂ to rutile one.

元素掺杂是调控氧化钒（VO ₂）相变的主要手段；然而，低价元素（<4+）掺杂对VO ₂相变的影响仍然存在争议。在目前的工作中，通过直流反应磁控溅射和随后的退火在石英玻璃上制备了Ni 掺杂的 VO ₂薄膜。随着Ni掺杂量的增加，VO ₂薄膜的加热相变温度（T _H）从73.4℃降低到52.4℃。发生相变所需的温度（T _b）低于T _MIT。与未掺杂的 VO ₂薄膜不同，Ni 掺杂的 VO_{2 个}薄膜的 T _b约为 30°C。XRD 和拉曼结果表明，由于掺入的 Ni 导致晶格畸变，在钒氧化物薄膜中出现了一些金红石 VO ₂微晶。因此，金红石VO ₂微结晶度显着促进了单斜晶VO ₂到金红石一的相变。