The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 10⁶ were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

无论支撑材料平台如何，高质量 (Q) 谐振器的实现一直是一个不断的追求，因为高 Q 谐振器为限制光提供了一个极端的环境，可以高效地观察许多非线性光学现象。这里，平均 Q 因子为 6.75 × 10 ^{6 的}光子微谐振器通过对数十次共振的统计分析确定，在 4H-碳化硅绝缘体 (4H-SiCOI) 平台上进行了演示。使用这些设备，已经观察到宽带频率转换，包括二、三和四次谐波。据我们所知，级联拉曼激光也首次在我们的 SiC 微谐振器中进行了演示。同时，通过设计 SiC 微谐振器的色散特性，我们实现了覆盖 1300 至 1700 nm 的宽带克尔频率梳。我们的演示代表了碳化硅光子集成器件开发的一个重要里程碑。