Enhancement on resistive switching characteristics of Bismuth ferrite (BFO) has attracted persistent interest in the past decades due to the inimitable interior structure. In the work, the amorphous and the polycrystalline Bismuth ferrite thin films have been successfully prepared via sol–gel method. We utilize X-ray diffraction, Transmission Electron Microscope and absorption spectrum to characterize the internal structure and calculate the band gap of Bismuth ferrite thin film samples. By comparing the current–voltage (I-V) characteristics between the amorphous and the polycrystalline sample, we investigate the amorphous sample has better resistive switching performance (switching ratio is 10⁴) than that of polycrystalline (1 0 ¹) bismuth ferrite thin film devices. However, the polycrystalline Bismuth ferrite sample exhibits favorable switchable photovoltaic response and good stability. Additionally, we discuss the conduction mechanism via the double logarithm fitting of amorphous Bismuth ferrite sample. The article also indicates that resistive switching property is closely related with the defects such as oxygen vacancies. The article deepens the comprehension of resistive switching properties of amorphous and polycrystalline Bismuth ferrite thin film which would have further potential applications in advanced electronic devices such as new resistive memory.

由于独特的内部结构，铋铁氧体 (BFO) 电阻开关特性的增强在过去的几十年里一直吸引着人们的兴趣。在这项工作中，通过溶胶-凝胶法成功制备了非晶和多晶铋铁氧体薄膜。我们利用 X 射线衍射、透射电子显微镜和吸收光谱来表征内部结构并计算铋铁氧体薄膜样品的带隙。通过比较非晶和多晶样品之间的电流-电压(IV)特性，我们研究了非晶样品比多晶样品具有更好的电阻开关性能（开关比为 10 ⁴）（1  0 ¹ ) 铋铁氧体薄膜器件。然而，多晶铋铁氧体样品表现出良好的可切换光伏响应和良好的稳定性。此外，我们通过非晶铋铁氧体样品的双对数拟合讨论了导电机制。文章还指出阻变特性与氧空位等缺陷密切相关。该文章加深了对非晶和多晶铋铁氧体薄膜电阻开关特性的理解，这将在新型电阻存储器等先进电子器件中具有进一步的潜在应用。