A nano-sized thin film layer of phosphorus-dysprosium doped silicon oxide (SiO₂:P,Dy) was successfully synthesized using the sol-gel method combined with spin coating technique. The surface morphology, structure, and luminescence properties of the synthesized thin film were characterized using Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), Fourier Transform Infrared-Attenuated Total Reflectance (FTIR-ATR), and Photoluminescence (PL). The average surface roughness was measured as 22.04 nm. The optical band gaps, E_g, of the samples were estimated using the Tauc model. A relatively good tensile strength between layers of the thin film of 10-SiO₂:P,Dy at 450 °C was observed. The characteristic main emission lines of Dy³⁺ for the 10 and 15 times coated samples were measured at 2.16 eV and 1.98 eV originated from the ⁴F_9/2 → ⁶H_13/2 and ⁴F_9/2 → ⁶H_11/2 transitions, respectively. The thermoluminescence of 10- SiO₂:P,Dy thin films annealed at 1000 °C exhibits generally broad TL glow curves peaking at 260 °C.

使用溶胶-凝胶法结合旋涂技术成功合成了磷镝掺杂氧化硅（SiO ₂ :P,Dy）的纳米级薄膜层。使用原子力显微镜 (AFM)、扫描电子显微镜 (SEM)、X 射线衍射 (XRD)、傅里叶变换红外衰减全反射 (FTIR-ATR) 表征合成薄膜的表面形貌、结构和发光性能) 和光致发光 (PL)。平均表面粗糙度测量为22.04nm。使用Tauc模型估计样品的光学带隙E _g。在 450°C 下观察到10-SiO ₂ :P,Dy薄膜的层间拉伸强度相对较好。Dy的特征主发射线10 次和 15 次涂层样品的³⁺分别在源自⁴ F _9/2  →  ⁶ H _13/2和⁴ F _9/2  →  ⁶ H _11/2跃迁的2.16 eV 和 1.98 eV 处测量。在 1000 °C 下退火的 10-SiO ₂ :P,Dy 薄膜的热释光表现出通常在 260 °C 处达到峰值的宽 TL 辉光曲线。