We have observed weak localization induced by disorder in thin films of Gd doped ZnO (Gd:ZnO) deposited by pulsed laser deposition (PLD). Disorder parameter (K_fl) of all the Gd:ZnO thin films was found to be greater than 1, which indicates that thin films of Gd:ZnO in this study are in metallic side of metal-insulator transition. However, temperature dependent resistivity studies of all the Gd:ZnO thin films exhibits negative temperature coefficient of resistance (TCR) showing semiconductor like nature at low temperatures. This anomaly in temperature dependent resistivity behaviour has been attributed to the dominant presence of weak localization. Magnetoresistance measurements confirms the dominant influence of weak localization in the conducting mechanism of Gd:ZnO films. Phase coherent length was found to be varied with the concentration of Gd and reports the highest value at ~360 nm for Gd:ZnO thin film with 1 at.% of Gd concentration. .

我们已经观察到由脉冲激光沉积 (PLD) 沉积的 Gd 掺杂 ZnO (Gd:ZnO) 薄膜中的无序引起的弱定位。障碍参数 ( K _f l) 的所有 Gd:ZnO 薄膜被发现大于 1，这表明本研究中的 Gd:ZnO 薄膜处于金属 - 绝缘体转变的金属侧。然而，所有 Gd:ZnO 薄膜的温度相关电阻率研究显示出负的电阻温度系数 (TCR)，在低温下表现出类似半导体的性质。这种温度相关电阻率行为的异常归因于弱局部化的主要存在。磁阻测量证实了 Gd:ZnO 薄膜导电机制中弱局部化的主要影响。发现相相干长度随 Gd 的浓度而变化，并报告了 Gd 浓度为 1 at.% 的 Gd:ZnO 薄膜在 ~360 nm 处的最高值。.