Influences of Oxygen Plasma Posttreatment on Electrical Characteristics of Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors,Physica Status Solidi (A) - Applications and Materials Science

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Influences of Oxygen Plasma Posttreatment on Electrical Characteristics of Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-07-02 , DOI: 10.1002/pssa.202100205
Jae-Yun Lee ₁ , Gergely Tarsoly ₁ , Seung-Gon Choi ₁ , Heung-Gyoon Ryu ₁ , Sung-Jin Kim ₁

Affiliation

A thin-film transistor (TFT) using amorphous indium–gallium–zinc oxide (a-IGZO) as an active layer is annealed at 300 °C after deposition and then treated with oxygen plasma. To analyze the effect of radio frequency (RF) power of the plasma generator on the a-IGZO TFT, as-deposited and plasma-treated devices using RF power levels of 60, 120, and 180 W are fabricated and characterized. It is demonstrated that the RF power setting of the plasma generator influences the threshold voltage (V _th), electron mobility, on/off current ratio and subthreshold swing of the devices alongside the transmittance and absorption coefficient of the a-IGZO layer. The a-IGZO TFT with oxygen plasma treatment at 60 W shows the best performance with a V _th of 0.4 V, electron mobility of 14.8 cm² V⁻¹ s⁻¹, an on/off current ratio of 4.8 × 10⁸, and a subthreshold swing of 0.6 V dec⁻¹. In addition, compared to the as-deposited device, the bandgap widens from 3.65 to 3.72 eV, and the absorption coefficient of the 2.0–3.7 eV energy range decreases, which is due to the decreased density of tail states, and that improves electron mobility. When the RF power applied in the oxygen plasma treatment is increased to 120 and 180 W, the optical, electrical, and surface characteristics deteriorate.

中文翻译：

氧等离子体后处理对非晶铟镓锌氧化物薄膜晶体管电特性的影响

使用非晶铟镓锌氧化物（a-IGZO）作为活性层的薄膜晶体管（TFT）在沉积后在 300°C 下退火，然后用氧等离子体处理。为了分析等离子体发生器的射频 (RF) 功率对 a-IGZO TFT 的影响，制造并表征了使用 60、120 和 180 W 的射频功率水平的沉积和等离子体处理设备。据表明，等离子体发生器影响RF功率设定的阈值电压（V _个），电子迁移率，开/关电流比和沿着一个-IGZO层的透射率和吸收系数的装置的次临界摆幅。采用 60 W 氧等离子体处理的 a-IGZO TFT 显示出最佳性能，V _th0.4 V、14.8 cm ² V ^-1 s ^{-1 的}电子迁移率、4.8 × 10 ⁸的开/关电流比和0.6 V dec ^-1的亚阈值摆幅。此外，与沉积态器件相比，带隙从 3.65 eV 扩大到 3.72 eV，2.0-3.7 eV 能量范围的吸收系数降低，这是由于尾态密度降低，从而提高了电子迁移率. 当在氧等离子体处理中施加的射频功率增加到 120 和 180 W 时，光学、电学和表面特性会恶化。

更新日期：2021-07-02

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