Herein, the influence of heat treatment at 400 °C on the spectrum of boron intracenter transitions in silicon using IR absorption spectroscopy is investigated. In the transition region from the ground 1Γ₈⁺ state associated with the p_3/2 valence band of Si to the odd-parity excited states of boron, a new absorption line with its maximum at 261.3 cm⁻¹ is observed in the thermally treated boron-doped Cz-Si. Oxygen is a component of defect that is responsible for the detected absorption line. Perturbation of boron atoms due to the inhomogeneous stress effect from neighboring oxygen atoms results in a frequency shift in the main boron transition. The defect associated with 261.3 cm⁻¹ line is also observed in as-grown silicon. The defect disappears during annealing at 550 °C. The concentration of defects and binding energy of the 1Γ₈⁺ ground state are estimated assuming that the line observed belongs to the transition of boron 1Γ₈⁺ → 2Γ₈⁻, subjected to the perturbation from a neighboring oxygen atom.

中文翻译：

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掺硼硅的红外吸收特性

在此，使用 IR 吸收光谱研究了 400 °C 热处理对硅中硼中心内跃迁光谱的影响。在从与Si的 p _3/2价带相关的基态 1Γ ₈ ⁺态到硼的奇校验激发态的过渡区中，在热处理过的材料中观察到一条新的吸收线，其最大值位于 261​​.3 cm ^-1硼掺杂的 Cz-Si。氧气是缺陷的一个组成部分，它负责检测到的吸收线。由于来自相邻氧原子的不均匀应力效应，硼原子的扰动导致主要硼跃迁的频移。与 261.3 cm ^-1相关的缺陷在生长的硅中也观察到线。缺陷在 550 °C 退火期间消失。假设观察到的谱线属于硼 1Γ ₈ ⁺ → 2Γ ₈ ^-的跃迁，受到邻近氧原子的扰动，估计缺陷浓度和 1Γ ₈ ⁺基态的结合能。