Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy,Physica Status Solidi (A) - Applications and Materials Science

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Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-07-02 , DOI: 10.1002/pssa.202100227
Po-Chun (Brent) Hsu _{1,

2} , Eddy Simoen _{1,

3} , Hu Liang ₁ , Brice De Jaeger ₁ , Benoit Bakeroot _{1,

4} , Dirk Wellekens ₁ , Stefaan Decoutere ₁

Affiliation

To investigate the defects from the gate regrowth process, samples with and without regrowth p-GaN process are fabricated by metalorganic chemical vapor deposition (MOCVD). The DC characteristics indicate larger gate leakage (I_gs) between the GaN channel and the p-GaN gate in the regrowth sample than in the nonregrowth counterpart. In addition, significant Si/O impurities are introduced by the regrowth process at the interface between channel and regrown AlGaN barrier. The low-frequency noise (LFN) measurement and deep-level transient spectroscopy (DLTS) are further carried out to investigate the defectivity at the AlGaN barrier and channel interface, giving a 2–3 times higher border trap density in the AlGaN barrier (depth ≈5 nm from the channel interface) and a 10 times increase in interface trap density at the channel interface, corresponding with a band of shallow levels E3 = E_c–0.02–0.15 eV. Three additional bulk traps E2/E5 (E_c–0.8 eV,

σ_{n} = 5 \times 10^{- 15} {cm}^{2}

/ E_c–0.17 eV,

σ_{n} = 5 \times 10^{- 22} {cm}^{2}

) and E4 (E_c–0.23 eV,

σ_{n} = 5 \times 10^{- 19} {cm}^{2}

) are also found in the regrowth and nonregrowth samples, respectively. Their possible spatial locations and origins are discussed.

中文翻译：

通过低频噪声和深能级瞬态光谱表征具有再生 p-GaN 栅极的高电子迁移率晶体管的缺陷

为了研究栅极再生长工艺中的缺陷，通过金属有机化学气相沉积 (MOCVD) 制造了采用和不采用再生长 p-GaN 工艺的样品。DC 特性表明更大的栅极泄漏 ( I _gs) 在再生长样品中的 GaN 沟道和 p-GaN 栅极之间比在非再生长样品中。此外，再生长过程在沟道和再生长的 AlGaN 势垒之间的界面处引入了大量的 Si/O 杂质。进一步进行低频噪声 (LFN) 测量和深能级瞬态光谱 (DLTS) 以研究 AlGaN 势垒和沟道界面处的缺陷，使 AlGaN 势垒中的边界陷阱密度（深度≈5 nm），通道界面处的界面陷阱密度增加了 10 倍，对应于浅能级带 E3 = E _c –0.02–0.15 eV。三个额外的体阱 E2/E5 ( E _c –0.8 eV,