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Temperature profile of nanospintronic device analyzed by spin-dependent Seebeck effect
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-07-02 , DOI: 10.35848/1882-0786/ac0b05
Md Kamruzzaman 1, 2 , Shaojie Hu 1 , Kohei Ohnishi 1 , Takashi Kimura 1
Affiliation  

The heat transport in a laterally configured nano-spintronic device, including a magnetic multi-layered nanowire has been investigated by detecting the second harmonic voltages. We show that the magnetic-field dependence of the second harmonic voltage in the multi-layered wire shows a clear spin-valve-like effect with the magnitude larger than the electrical spin valve effect. The second harmonic signal with its probe configuration dependence is found to be quantitatively explained by the spin-dependent Seebeck effect with a significant heat flow from the substrate. This demonstration paves the way for the precise analysis of the heat flow in nano-structured electronic devices.



中文翻译:

通过自旋相关的塞贝克效应分析纳米自旋电子器件的温度分布

通过检测二次谐波电压研究了横向配置的纳米自旋电子器件中的热传输,包括磁性多层纳米线。我们表明,多层导线中二次谐波电压的磁场依赖性显示出明显的类似自旋阀​​的效应,其幅度大于电自旋阀效应。发现具有探针配置依赖性的二次谐波信号可以由自旋相关的塞贝克效应定量解释,并具有来自基板的显着热流。该演示为精确分析纳米结构电子设备中的热流铺平了道路。

更新日期:2021-07-02
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