Molecular Dynamics Simulation of Nanomachining Mechanism between Monocrystalline and Polycrystalline Silicon Carbide,Advanced Theory and Simulations

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Molecular Dynamics Simulation of Nanomachining Mechanism between Monocrystalline and Polycrystalline Silicon Carbide
Advanced Theory and Simulations ( IF 2.9 ) Pub Date : 2021-07-03 , DOI: 10.1002/adts.202100113
Bing Liu ₁ , Haijie Yang ₁ , Zongwei Xu ₂ , Dongai Wang ₁ , Hongwei Ji ₁

Affiliation

As an advanced ceramics material, silicon carbide (SiC) is extensively applied in numerous industries. In this study, molecular dynamics method is used to comparatively investigate the nanomachining mechanism between monocrystalline SiC (mono-SiC) and polycrystalline SiC (poly-SiC) ceramics. Four simulations are performed for the two materials with and without ultrasonic vibration-assisted machining (UVAM). The diamond tool is set as a non-rigid body and vibrated along the depth direction with 100 GHz in frequency and 0.5 nm in amplitude. The effects of material and ultrasonic vibration on the nanomachining mechanism of SiC are analyzed in depth, including the surface generation, subsurface damage, and tool wear. It is determined that the machinability of SiC ceramics can be effectively improved by UVAM. The machining-induced damage extent of poly-SiC is more serious than that of mono-SiC. It is also found that UVAM can effectively reduce the machining-induced damage, decrease the machining resistance, and increase the possibility of ductile removal, but bring about a slightly larger tool wear.

中文翻译：

单晶与多晶碳化硅纳米加工机理的分子动力学模拟

作为一种先进的陶瓷材料，碳化硅（SiC）被广泛应用于众多行业。本研究采用分子动力学方法比较研究了单晶碳化硅（mono-SiC）和多晶碳化硅（poly-SiC）陶瓷的纳米加工机理。对使用和不使用超声波振动辅助加工 (UVAM) 的两种材料进行了四次模拟。金刚石工具设置为非刚体，沿深度方向振动，频率为 100 GHz，振幅为 0.5 nm。深入分析了材料和超声振动对碳化硅纳米加工机理的影响，包括表面生成、次表面损伤和刀具磨损。确定了UVAM可以有效提高SiC陶瓷的切削加工性。多晶碳化硅的机加工损伤程度比单晶碳化硅更严重。还发现UVAM可以有效减少加工损伤，降低加工阻力，增加韧性去除的可能性，但带来的刀具磨损稍大。

更新日期：2021-08-07

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