The electronic properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. The band structures of InSb with and without spin-orbit coupling (SOC) consideration are compared and the SOC modification on the electronic properties are investigated. In this regard, the electron and hole effective masses decrease by applying SOC two and ten times, respectively. The location of the valleys in the conduction and valence bands for various strains are explored, and their corresponding effective masses are reported. The lowest effective mass is obtained for both electron and hole at tensile strain. In addition, the bandgap demonstrates a maximum at small compressive strain and transits to metal at large tensile strain. The work function of this material for different strains is obtained. Finally, a numeric fitting is applied to all results and their corresponding equations are reported.

使用密度泛函理论研究了在双轴应变存在下单层 InSb 的电子特性。比较了考虑和不考虑自旋轨道耦合 (SOC) 的 InSb 的能带结构，并研究了 SOC 对电子特性的修改。在这方面，电子和空穴的有效质量分别通过应用 SOC 两次和十次而减少。探索了各种应变的导带和价带中谷的位置，并报告了它们相应的有效质量。在拉伸应变下，电子和空穴都获得了最低的有效质量。此外，带隙在小压缩应变时表现出最大值，并在大拉伸应变时过渡到金属。获得了这种材料在不同应变下的功函数。最后，