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Impact of Deposition Temperature on Crystal Structure and Ferroelectric Properties of (Al1−x Sc x )N Films Prepared by Sputtering Method
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-07-01 , DOI: 10.1002/pssa.202100302 Shinnosuke Yasuoka 1 , Takao Shimizu 1, 2, 3 , Masato Uehara 4 , Hiroshi Yamada 4 , Morito Akiyama 4 , Hiroshi Funakubo 1, 5
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-07-01 , DOI: 10.1002/pssa.202100302 Shinnosuke Yasuoka 1 , Takao Shimizu 1, 2, 3 , Masato Uehara 4 , Hiroshi Yamada 4 , Morito Akiyama 4 , Hiroshi Funakubo 1, 5
Affiliation
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The deposition temperature dependence of the crystal structure and ferroelectricity for Sc-doped AlN [(Al0.78Sc0.22)N] films is investigated. (Al0.78Sc0.22)N films 120–190 nm thick are deposited at various deposition temperatures between 500 °C and ambient temperature without heating on (111)Pt/TiO
x
/SiO2/(100)Si substrates. Crystalline films are obtained for all films, but its (001) orientation decreases with decreasing deposition temperature below 300 °C. Crystal anisotropy increases with decreasing deposition temperature due to the decrease in the thermal strain that originates from the larger thermal expansion coefficient of (Al0.78Sc0.22)N than Si. Ferroelectricity is observed by both of the polarization–electric field (P–E) curves and the positive-up–negative-down (PUND) measurement for all films. The ferroelectric polarization switching of the films deposited without heating is ascertained not only by P–E curves but also by the phase change of the piezoresponse. Slight increase in the coercive field with decreasing deposition temperature can be explained by the increase in crystal anisotropy.
中文翻译：
沉积温度对溅射法制备的(Al1-x Sc x )N薄膜晶体结构和铁电性能的影响
研究了 Sc 掺杂的 AlN [(Al 0.78 Sc 0.22 )N] 薄膜的晶体结构和铁电性的沉积温度依赖性。(Al 0.78 Sc 0.22 )N 膜 120–190 nm 厚在 500 °C 和环境温度之间的不同沉积温度下沉积，无需在 (111)Pt/TiO x /SiO 2 /(100)Si 衬底上加热。所有薄膜都获得了结晶薄膜，但其 (001) 取向随着沉积温度低于 300 °C 而降低。由于 (Al 0.78 Sc 0.22 )N 比 Si。所有薄膜的极化 - 电场（P - E）曲线和正上负下（PUND）测量都观察到铁电性。不加热沉积的薄膜的铁电极化切换不仅通过P - E曲线确定，而且通过压电响应的相变确定。矫顽场随着沉积温度的降低而略有增加可以用晶体各向异性的增加来解释。
更新日期：2021-09-09
中文翻译：
沉积温度对溅射法制备的(Al1-x Sc x )N薄膜晶体结构和铁电性能的影响
研究了 Sc 掺杂的 AlN [(Al 0.78 Sc 0.22 )N] 薄膜的晶体结构和铁电性的沉积温度依赖性。(Al 0.78 Sc 0.22 )N 膜 120–190 nm 厚在 500 °C 和环境温度之间的不同沉积温度下沉积，无需在 (111)Pt/TiO x /SiO 2 /(100)Si 衬底上加热。所有薄膜都获得了结晶薄膜，但其 (001) 取向随着沉积温度低于 300 °C 而降低。由于 (Al 0.78 Sc 0.22 )N 比 Si。所有薄膜的极化 - 电场（P - E）曲线和正上负下（PUND）测量都观察到铁电性。不加热沉积的薄膜的铁电极化切换不仅通过P - E曲线确定，而且通过压电响应的相变确定。矫顽场随着沉积温度的降低而略有增加可以用晶体各向异性的增加来解释。
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